cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 1/7 MTDN9922Q8 cystek product specification dual n-channel enhancem ent mode power mosfet MTDN9922Q8 description the MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all co mmercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? r ds(on) =20m @v gs =4.5v, i d =4a ? simple drive requirement ? low on-resistance ? fast switching speed ? dual n-ch mosfet package ? capable of 2.5v gate drive ? pb-free lead plating package equivalent circuit outline ordering information device package shipping marking MTDN9922Q8 sop-8 (pb-free lead plating package) 3000 pcs / tape & reel 9922ess MTDN9922Q8 sop-8 g gate s source d drain
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 2/7 MTDN9922Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current @ v gs =4.5v, t a =25 c (note 1) i d 6.8 a continuous drain current @ v gs =4.5v, t a =70 c (note 1) i d 5.4 a pulsed drain current (note 2&3) i dm 25 a pd 2 w total power dissipation @ t a =25 c linear derating factor 0.016 w / c operating junction and storage temp erature range tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 62.5 c/w note : 1. su rface mounted on 1 in2 copper pad of fr-4 board; 135 c/w when mounted on minimum copper pad 2. pulse width lim ited by maximum junction temperature. 3. pulse width 300 s, duty cycle 2% characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v v gs =0, id=250 a bv dss / tj - 0.05 - v/ c reference to 25 c, i d =1ma v gs(th) 0.5 - 1.2 v v ds = v gs , i d =250 a g fs - 22 - s v ds =4.5v, i d =6a i gss - - 10 a v gs =12v, v ds =0 - - 10 a v ds =20v, v gs =0 i dss - - 100 a v ds =16v, v gs =0, tj=70 c - - 20 i d =6a, v gs =4.5v *r ds(on) - - 25 m i d =4a, v gs =2.5v dynamic *qg - 25 40 *qgs - 3 - *qgd - 9 - nc v ds =16v, i d =6a, v gs =4.5v *td (on) - 11 - *tr - 12 - *td (off) - 47 - *tf - 23 - ns v ds =15v, i d =1a, v gs =4.5v, r g =3.3 , r d =15 ciss - 1730 2770 coss - 280 - crss - 240 - pf v ds =20v, v gs =0, f=1mhz rg - 2.2 - f=1.0mhz source-drain diode *v sd - - 1.2 v i s =0.84a, v gs =0v *trr - 24 - ns *qrr - 18 - nc i s =6a, v gs =0, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 3/7 MTDN9922Q8 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 4/7 MTDN9922Q8 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 5/7 MTDN9922Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 6/7 MTDN9922Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c ? time(ts min to ts max ) 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c425q8 issued date : 2007.12.06 revised date : 2011.03.21 page no. : 7/7 MTDN9922Q8 cystek product specification sop-8 dimension *: typical inches millimeters 8-lead sop-8 plastic package cystek packa g e code: q8 marking: top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name 9922ess inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1890 0.2007 4.80 5.10 i 0.0098 ref 0.25 ref b 0.1496 0.1654 3.80 4.20 j 0.0118 0.0354 0.30 0.90 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0138 0.0193 0.35 0.49 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0531 0.0689 1.35 1.75 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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